Leading-Edge Trend in Photolithography Materials
نویسندگان
چکیده
منابع مشابه
Incorporating mask topography edge diffraction in photolithography simulations.
In deep ultraviolet lithography simulations, conventional application of Kirchhoff's boundary conditions on the mask surface provides the so-called "thin-mask" approximation of the object field. Current subwavelength lithographic operation, however, places a serious limitation on this approximation, which fails to account for the topographical, or "thick-mask," effects. In this paper, a new sim...
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ژورنال
عنوان ژورنال: Kobunshi
سال: 2006
ISSN: 0454-1138,2185-9825
DOI: 10.1295/kobunshi.55.74